Erbium luminescence from hydrogenated amorphous silicon-erbium prepared by cosputtering

Luminescence quenching in erbiumdoped hydrogenated amorphous silicon

Erbium–Silicon–Oxide crystalline films prepared by MOMBE

Er–Si–O crystalline thin film preparation on silicon substrates by using metal organic molecular beam epitaxy (MOMBE) is proposed. Tetra ethoxy silane (TEOS) and tris-2,2,6,6-tetra methyl-3,5-octane dionato erbium (Er(TMOD)3) were used as Si–O and Er– O precursors, respectively. The Er–Si–O thin film crystallizes mainly during the post-annealing process and into a novel type of erbium-silicate ...

Erbium-Doped Amorphous Carbon-Based Thin Films: A Photonic Material Prepared by Low-Temperature RF-PEMOCVD

The integration of photonic materials into CMOS processing involves the use of new materials. A simple one-step metal-organic radio frequency plasma enhanced chemical vapor deposition system (RF-PEMOCVD) was deployed to grow erbium-doped amorphous carbon thin films (a-C:(Er)) on Si substrates at low temperatures (<200 °C). A partially fluorinated metal-organic compound, tris(6,6,7,7,8,8,8-hepta...

Luminescence from amorphous silicon nanostructures.

We present a model of size-dependent luminescence from a-Si:H and show that a blueshift of the luminescence energy and a general increase in luminescence quantum efficiency are predicted as structure size decreases. In contrast to bulk a-Si:H structures, highly confined a-Si:H exhibits visible luminescence peak energies and high radiative quantum efficiency at room temperature, which is insensi...

Room-temperature photoluminescence in erbium-doped deuterated amorphous carbon prepared by low-temperature MO-PECVD.

We report on a novel optical thin film material, erbium-doped deuterated amorphous carbon, fabricated directly on silicon substrate at room-temperature via controlled thermal evaporation of a Metal-Organic compound in a Plasma-Enhanced Chemical Vapour Deposition (MO-PECVD) system. High erbium concentrations (up to 2.3 at.%) and room-temperature photoluminescence at 1.54 microm are successfully ...